Hynix unveils $1.84 bln investment to build new 3D NAND flash plant

By Park Sae-jin Posted : December 22, 2016, 08:56 Updated : December 22, 2016, 08:56

[Courtesy of SK Hynix]


South Korean microchip producer SK Hynix unveiled its plan Thursday to spend some 1.84 billion US dollars on the construction of a new plant for 3D NAND flash memory chips.

Hynix said the plant would be built in its production base in Cheongju, 115 kilometers (69 miles) south of Seoul, with an investment of about 2.2 trillion won ($1.84 billion). The company has steadily increased the production of NAND flash memory chips since it was acquired by South Korea's SK Group in 2012.

Memory chip makers are taking a strong initiative in 3D NAND, a product that is created by stacking the circuit of flat NAND chips vertically. The 3D NAND market is growing rapidly thanks to cloud computing. Hynix stood fourth in the NAND flash market after Samsung Electronics, Toshiba, and SanDisk.

Reports emerged a week ago that Hynix was considering a joint venture with US data storage company Seagate Technology which along with Western Digital dominates the hard disk drive market.

In China, Hynix has also increased production at a DRAM plant in the Chinese city of Wuxin that accounts for about half of the company's total DRAM output.

 
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