SEOUL -- Samsung Electronics achieved a technical breakthrough by developing a new 16-gigabyte dynamic random-access memory chip called "Flashbolt" which is uniquely suited to maximize high-performance computing systems and help system manufacturers to advance their supercomputers, AI-driven data analytics and state-of-the-art graphics systems in a timely manner.
Flashbolt can sharply increase performance and power efficiency to significantly improve next-generation computing systems, Samsung said in a statement on Tuesday, adding it provides a highly reliable data transfer speed of 3.2 gigabits per second (Gbps) by leveraging a proprietary optimized circuit design for signal transmission.
"With the introduction of the highest performing DRAM available today, we are taking a critical step to enhance our role as the leading innovator in the fast-growing premium memory market," Choi Cheol, executive vice president of Samsung's memory sales and marketing, was quoted as saying.
Volume production is expected to begin during the first half of this year. Samsung, one of the world's largest microchip producers, said that it would continue providing its second-generation Aquabolt lineup while expanding its third-generation Flashbolt offering.
Samsung said that Flashbolt, the third-generation High Bandwidth Memory 2E (HBM2E), delivers twice the capacity of its previous-generation 8GB HBM2 Aquabolt and can attain a transfer speed of 4.2Gbps, the maximum tested data rate to date.
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